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2SK3076(L),2SK3076(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-656 (Z) 1st. Edition Jun 1998 Features
* * * * Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns)
Outline
LDPAK
4 4
D
1 G 1 2 3
2
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK3076(L),2SK3076(S)
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings 500 30 7 28 7
Unit V V A A A W C C
Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Pch Tch Tstg
Note2
60 150 -55 to +150
Electrical Characteristics (Ta = 25C)
Item Symbol Min 500 30 -- -- 2.0 -- Typ -- -- -- -- -- 0.7 Max -- -- 10 250 3.0 0.9 Unit V V A A V Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 25V, VDS = 0 VDS = 400 V, VGS = 0 I D = 1mA, VDS = 10V I D = 4A, VGS = 10VNote4 I D = 4A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D =4A, VGS = 10V RL = 7.5 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time |yfs| Ciss Coss Crss t d(on) tr t d(off) tf 3.5 -- -- -- -- -- -- -- -- -- 6.0 1100 310 50 15 55 100 48 0.9 120 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 7A, VGS = 0 I F = 7A, VGS = 0 diF/ dt =100A/s I GSS I DSS VGS(off) RDS(on)
Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Note: 4. Pulse test t rr
2
2SK3076(L),2SK3076(S)
Main Characteristics
Power vs. Temperature Derating 80
Pch (W) I D (A)
100 30 10 3 1 0.3 0.1 0.03
Maximum Safe Operation Area
60
DC
PW
10
= 10
10
0
Channel Dissipation
Drain Current
Op
1m
m s( 1s
s s
s
er
40
20
ho Operation in c = t) 25 this area is C limited by R DS(on) )
at
ion
(T
0
50
100
150 Tc (C)
200
Case Temperature
Ta = 25 C 0.01 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V)
Typical Output Characteristics 20 10 V
I D (A)
Typical Transfer Characteristics 20 -25C
(A)
4V
6V 16
16 Pulse Test 12 5V
Ta = 25C
ID
12
75C
Drain Current
8
Drain Current
8
4 VGS = 4 V 0 10 20 30 Drain to Source Voltage 40 50 V DS (V)
4 V DS = 20 V Pulse Test 0 2 4 6 Gate to Source Voltage 8 10 V GS (V)
3
2SK3076(L),2SK3076(S)
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 VGS = 10 V 1 0.5 15 V
Drain to Source Saturation Voltage V DS(on) (V)
Pulse Test
8 10 A 6
4 5A 2 ID=2A 12 4 8 Gate to Source Voltage
Drain to Source On State Resistance R DS(on) ( )
10
0.2 0.1
0
16 20 V GS (V)
0.05 0.5
1
2 5 10 20 Drain Current I D (A)
50
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 2.0 V GS = 10 V Pulse Test 1.6 I D = 10 A
Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 2 1 0.5 0.1 0.2 1 2 5 0.5 Drain Current I D (A) 10 V DS = 20 V Pulse Test Tc = -25 C 25 C 75 C
1.2
0.8
2, 5 A
0.4 0 -40
0 40 80 120 160 Case Temperature Tc (C)
4
2SK3076(L),2SK3076(S)
Body-Drain Diode Reverse Recovery Time di / dt = 100 A / s V GS = 0, Ta = 25 C PulseTest Typical Capacitance vs. Drain to Source Voltage
5000
5000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2000 1000 500
Ciss
1000
VGS = 0 f = 1 MHz
Coss
100
200 100
10
Crss
50 0.2
2 5 1 10 0.5 Reverse Drain Current I DR (A)
5
20
0
10
20
30
40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DS (V)
Switching Characteristics
V GS (V)
500
ID=7A V DD = 100 V 250 V 400 V V DS V GS
20
500
Switching Time t (ns)
400
16
200 100 50 tf tr t d(on) V GS = 10 V, V DD = 30 V PW = 2 s, duty < 1 % 0.5 1 2 5 I D (A) 10 20 t d(off)
Drain to Source Voltage
300
12
200 V DD = 400 V 250 V 100 V 8 16 24 32
8
Gate to Source Voltage
20 10 5 0.2
100
4 0 40
0
Gate Charge
Qg (nc)
Drain Current
5
2SK3076(L),2SK3076(S)
Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current I DR (A)
16
10 V V GS = 0, -10 V
12
15 V
8
4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermao Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 2.08 C/W, Tc = 25 C
PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
1m
10 m 100 m Pulse Width PW (S)
1
10
6
2SK3076(L),2SK3076(S)
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform
90%
7
2SK3076(L),2SK3076(S)
Package Dimensions
Unit: mm
(1.4)
10.2 0.3
4.44 0.2
1.3 0.2
11.3 0.5
8.6 0.3 10.0 +0.3 -0.5
(1.4)
10.2 0.3
4.44 0.2
1.3 0.2
(1.5)
11.0 0.5
(1.5)
0.76 0.1
(1.5)
8.6 0.3 10.0 +0.3 -0.5
1.2 0.2 0.86 +0.2 -0.1
1.27 0.2
2.59 0.2
1.27 0.2 0.4 0.1 1.2 0.2 2.54 0.5 0.86 +0.2 -0.1 2.54 0.5
3.0 +0.3 -0.5
0.1 +0.2 -0.1 2.59 0.2 0.4 0.1
2.54 0.5
2.54 0.5
L type
S type
Hitachi Code EIAJ JEDEC
LDPAK -- --
8
2SK3076(L),2SK3076(S)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA. 94005-1897 USA Tel: 800-285-1601 Fax:303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30-00 Hitachi Asia (Hong Kong) Ltd. Hitachi Asia Pte. Ltd. Hitachi Europe Ltd. 16 Collyer Quay #20-00 Unit 706, North Tower, Electronic Components Div. World Finance Centre, Northern Europe Headquarters Hitachi Tower Harbour City, Canton Road Singapore 049318 Whitebrook Park Tsim Sha Tsui, Kowloon Tel: 535-2100 Lower Cookham Road Hong Kong Fax: 535-1533 Maidenhead Tel: 27359218 Berkshire SL6 8YA Fax: 27306071 United Kingdom Tel: 01628-585000 Fax: 01628-585160 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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